海角社区

窗体顶端

◆ 个人简介 

2015年于安徽工业大学获电气工程专业（学科）学士学位，2023年于湖南大学电气工程专业（学科）毕业，获得工学博士学位，同年6月入职电气工程系。长期从事宽禁带功率半导体器件/模块及其应用的科学技术研究和产业化技术攻关，包括器件物理与器件/模块设计，器件/模块制备及测试分析、建模，器件/模块可靠性及其改善方法，智能功率集成、电力电子应用等。在功率半导体器件/模块与功率集成领域已取得原创性研究成果对项，涉及SiC MOSFET、SiC JBS二极管、SiC IGBT、SiC GTO晶闸管、高压单片集成SiC GTO晶闸管、Si/SiC混合开关······

近年来在IEEE Transactions on Electron Devices、Semiconductor Science and Technology，IET Power Electronics等国际顶级期刊发表SCI收录论文10篇，在国际期刊/会议发表EI收录论文14篇，授权发明专利3项。

窗体底端

◆ 招生专业

1、电气工程（学术型） 2、电气工程（专业型） 3、控制科学与工程（学术型） 4、电子信息（专业型）

◆ 获奖、荣誉称号

1. 电气青年教师教学竞赛三等奖，2024年

2. 中国研究生创“芯”大赛全国总决赛三等奖，2021年

3. “优秀毕业生”，2018年

◆ 社会、学会及学术兼职

中国电源学会器件专委会委员，IEEE Member，PELS Member

IEEE Electron Device Letters、IEEE Transactions on Electron Devices、IEEE Journal of Emerging and Selected Topics in

Power Electronics、IEEE Industrial Electronics Magazine、IEEE Transactions on Power Electronics、Semiconductor Science and Technology、Journal of Food Process Engineering等多领域国际顶级期刊审稿专家

◆ 科研项目

作为核心研究人员参与国家重点研发计划重点专项项目、联合基金项目、国家自然科学基金项目、省科技重大专项、自然科学研究项目和企业横向项目多项，主持安徽省自然科学基金等4项。主要包括：

1. 安徽省自然科学基金青年项目，主持，在研

2. 安徽省高校电力电子与运动控制重点实验室开放基金，主持，在研

3. 安徽工业大学青年基金，主持，在研

4. 安徽工业大学引进人才科研启动基金，主持，在研

5. 国家重点研发计划重点专项项目：提升高压大功率 SiC IGBT 芯片电气性能的结构和方法，主研，结题

6. 国家自然科学基金联合基金项目：高性能高可靠性晶体管理论模型与设计方法研究，参与，结题

7. 湖南省科技重大专项：SiC 关键装备和电力电子器件技术研发及产业化，主研，结题

8. 湖南省重点研发计划, 新型高性能碳化硅功率MOSFET器件技术研究，参与，结题

9. 国家自然科学基金项目：SiC BJT 功率集成基础技术研究，参与，结题

10. 安徽高校自然科学研究项目：高迁移率SiC MOSFET的研究，主研，结题

11. 南网直流输电装备与海底电缆安全运行联合实验室开放基金：SiC IGBT在特高压柔性直流输电技术

领域的仿真设计及损耗研究，主研，结题

12. xxx半导体科技有限公司：高压SiC GTO器件方案技术咨询，主研，结题

◆ 研究领域

1.功率半导体器件物理与设计、制备及测试分析、建模

2.功率半导体器件可靠性及其改善方法

3.智能功率集成技术

◆ 发表论文

1. Hangzhi Liu; Shiwei Liang; Yuming Zhou; Jun Wang; Physical Insight into Turn-on Transient of Silicon Carbide Gate Turn-off Thyristor, IET Power Electronics, 2024,7: 878–889.

2. Hangzhi Liu, Jun Wang, Shiwei Liang*, Hengyu Yu, Gaoqiang Deng, Yuwei Wang and Z. John Shen, "Modelling and Analysis of SiC GTO Thyristor’s Dynamic Turn-on Transient," IEEE Transactions on Electron Devices, vol. 69, no. 11, pp. 6241-6248, Nov. 2022.

3. Hangzhi Liu*, Jun Wang*, Shiwei Liang, Hengyu Yu and Wenjuan Deng, "Physical modeling and design optimization of 4H-SiC insulated gate bipolar transistors for dv/dt reduction," Semiconductor Science and Technology, vol. 36, no. 2, pp. 025009, Dec. 2020.

4. H. Liu, Y. Zhou, Comprehensive Evaluation on Si/SiC Hybrid Switch Including Single-Pulse Avalanche and Short-Circuit Robustness, Journal of Electronic Science and Technology

5. Shiwei Liang, Hangzhi Liu*, Hengyu Yu, Bingru Chen, Jun Wang*, Gaoqiang Deng and Z. John Shen, "Exploration on Electrical Isolation Between High-Voltage SiC Thyristor and Small-Signal Devices for Smart Power Devices," IEEE Transactions on Electron Devices, vol. 69, no. 8, pp. 4757-4760, Aug. 2022.

6. 肖凯，刘航志*，王振，邹延生，王俊。高压碳化硅 IGBT 器件的电学特性[J].半导体技术，2023，48(02)：102-109+139.

7. Hangzhi Liu, Dehang He, and Yuming Zhou, "UIS Characterization of Hybrid Si/SiC Device under Single Pulse Avalanche Mode," 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia), Chengdu, China, 2024, pp. 1856-1859.

8. Hangzhi Liu, Jiaqi Guo, Wei Yue, Hengyu Yu, Shiwei Liang, Gaoqiang Deng, Yuwei Wang, Linfeng Deng, Yuming Zhou, Jun Wang and Z. John Shen, "High dv/dt in High Voltage SiC IGBT and Method of Suppression," 2021 IEEE 1st International Power Electronics and Application Symposium (PEAS), Shanghai, 2021, pp. 1-8.

9. Hangzhi Liu, Xin Yin, Wenjuan Deng, Shiwei Liang, Fang Fang and Jun Wang,"Evaluation on Dynamic Switching Noise and Power Loss in High-voltage SiC IGBT," 2019 IEEE 3rd International Electrical and Energy Conference (CIEEC), Beijing, 2019, pp. 818-822.

10. Hangzhi Liu, Y. Zhou, An Experimental Study on Single Pulse Avalanche Characteristics of Si/SiC Hybrid Switch, 2025 WiPDA Asia

11. Yang^†, H. Liu^†*, Y. Zhou, X. Dai, Q. Xu and X. Gong, "Short-Circuit Failure Mechanism and Robustness Analysis of 15kV SiC IGBT," 2025 8th International Conference on Energy, Electrical and Power Engineering (CEEPE), Wuxi, China, 2025, pp. 851-856.

12. A. Hu, H. Liu, Y. Zhou, "Comparative Study on the Characteristics of SiC FET/Si IGBT and SiC MOSFET/Si IGBT Hybrid Switches," 2024 IEEE Transportation Electrification Conference and Expo, Asia-Pacific (ITEC Asia-Pacific), Xi'an, China, 2024, pp. 651-657.

13. X. Dai, H. Liu, Y. Zhou, B. Yang, X. Gong and Q. Xu, "A Comparative Study on the Parameter Degradation of SiC FETs and SiC MOSFETs under Power Cycling Tests," 2025 8th International Conference on Energy, Electrical and Power Engineering (CEEPE), Wuxi, China, 2025, pp. 120-125.

14. Y. Zhou*, H. Liu, S. Mu, Z. Chen and B. Wang, "Short-Circuit Failure Model of SiC MOSFET Including the Interface Trapped Charges," IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 8, no. 1, pp. 90-98, March 2020.

15. 周郁明*,刘航志,杨婷婷，王兵.碳化硅MOSFET电路模型及其应用[J].西安电子科技大学学报,2018,45(03):97-101+129.

16. Hengyu Yu, Shiwei Liang, Hangzhi Liu, Jun Wang* and Z. John Shen, "Numerical Study of SiC MOSFET With Integrated n-/n-Type Poly-Si/SiC Heterojunction Freewheeling Diode," IEEE Transactions on Electron Devices, vol. 68, no. 9, pp. 4571-4576, Sept. 2021.

17. Shiwei Liang*, Hengyu Yu, Hangzhi Liu, Yuwei Wang and Jun Wang, "A novel SiC power MOSFET with integrated polySi/SiC heterojunction freewheeling diode," Semiconductor Science and Technology, vol. 36, no. 9, pp. 095017, Aug. 2021.

18. Shiwei Liang*, Jun Wang, Fang Fang, Hangzhi Liu and Wenjuan Deng, "Investigation on 4H-SiC Gate Turn-off Thyristor with Direct Carrier Extraction Access to Drift Region for Power Conversion Applications," Semiconductor Science and Technology, vol. 35, no. 4, pp. 5028, 2020.

19. Wenjuan Deng, Hangzhi Liu, Shiwei Liang, Fang Fang and Jun Wang, "Influence of N-drift Layer Parameters on Static and Dynamic Performances of Ultra-high Voltage SiC IGBT," 2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia), Nanjing, 2020, pp. 2191-2194.

20. Shiwei Liang, Jiaqi Guo, Hangzhi Liu and Jun Wang, "Evaluation of High-Voltage 4H-SiC Gate Turn-off Thyristor for Pulsed Power Application," 2021 IEEE 1st International Power Electronics and Application Symposium (PEAS), Shanghai, 2021, pp. 1-4.

21. Fang Fang, Shiwei Liang, Xin Yin, Hangzhi Liu, Wenjuan Deng, Jun Wang, Kun Zhou, Xiaopeng Cao, "Analysis of Parallel Operation of 4H-SiC GTOs," 2019 IEEE 3rd International Electrical and Energy Conference (CIEEC), Beijing, China, 2019, pp. 596-600.

注：*标注为通讯作者，^†标注为共同第一作者

◆ 出版专著和教材

◆ 科研创新

◆ 指导学生情况

担任本科生班主任、本科生导师；每年指导本科生毕业设计若干名；

每年指导研究生和本科生参加各类创新竞赛

每年招收硕士生2-3名；指导方式：1对1指导+组会讨论

培养情况：

指导硕士研究生2人，在读。

2025届本科生（宗**，至中科院电工所深造）

2024届本科生（陈**，至华北电力大学深造）

◆ 我的团队

依托“电力电子与运动控制”等等安徽省重点实验室开展产学研用活动。研经费充足，具有完备的科研设备设施和软件平台。研究组内部气氛和谐融洽，凝聚力强，文体活动丰富，老师平易近人、和蔼可亲、国际学术视野广阔、工程实践经验丰富，学生就业前景良好。诚邀每一位富有钻研探索精神、踏实肯干且具备持之以恒毅力，对研究有热情和充分的好奇心的优秀学子加入！团队与湖南大学、“功率半导体与集成全国重点实验室”等知名高校、科研机构进行了深度合作，可推荐优秀学生赴合作高校交流或深造。